METHODS OF FORMING A MULTI-DOPED JUNCTION WITH POROUS SILICON
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United States of America Patent
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Issued Date -
Jan 6, 2011
app pub date -
Jun 4, 2010
filing date -
Jul 2, 2009
priority date (Note) -
Abandoned
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Abstract
gas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.
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