Method for making a full-spectrum solar cell with an anti-reflection layer doped with silicon quantum dots
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United States of America Patent
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Issued Date -
Feb 3, 2011
app pub date -
Mar 14, 2008
filing date -
Mar 14, 2008
priority date (Note) -
Abandoned
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Abstract
In a method for making a full-spectrum solar cell, there is provided an ordinary solar cell with an anti-reflection layer. The anti-reflection layer is coated with a film of silicon nitride and/or silicon oxide. The silicon/nitrogen ratio and/or the silicon/oxygen ratio and the temperature are regulated, thus forming a silicon-rich film via doping the anti-reflection layer with silicon from the film of silicon nitride and/or silicon oxide. The precipitation of the silicon in the silicon-rich film is executed based on a mechanism of phase separation, thus forming silicon quantum dots of various sizes in the anti-reflection layer.
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