Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture
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United States of America Patent
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Jun 5, 2012
Grant Date -
Feb 10, 2011
app pub date -
Aug 5, 2009
filing date -
Aug 5, 2009
priority date (Note) -
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Abstract
A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.
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