Complimentary metal-insulator-metal (MIM) capacitors and method of manufacture

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United States of America Patent

PATENT NO 8191217
APP PUB NO 20110032659A1
SERIAL NO

12535769

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Abstract

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A high density capacitor and low density capacitor simultaneously formed on a single wafer and a method of manufacture is provided. The method includes depositing a bottom plate on a dielectric material; depositing a low-k dielectric on the bottom plate; depositing a high-k dielectric on the low-k dielectric and the bottom plate; depositing a top plate on the high-k dielectric; and etching a portion of the bottom plate and the high-k dielectric to form a first metal-insulator-metal (MIM) capacitor having a dielectric stack with a first thickness and a second MIM capacitor having a dielectric stack with a second thickness different than the first thickness.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dunn, James S Jericho, US 61 704
He, Zhong-Xiang Essex Junction, US 175 1736
Stamper, Anthony K Williston, US 613 6570

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