METHOD FOR FORMING A TEXTURED SURFACE ON A SEMICONDUCTOR SUBSTRATE USING A NANOFABRIC LAYER
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United States of America Patent
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Issued Date -
Feb 10, 2011
app pub date -
Aug 7, 2009
filing date -
Aug 7, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A method of forming a textured surface on a substrate or material layer within a semiconductor fabrication process. In one aspect of the disclosure, a sacrificial nanofabric layer is deposited over a material layer and an etch process is used to transfer the surface texture of the nanofabric layer downward to the material layer. In another aspect of the disclosure, a thin material layer is deposited over a nanofabric layer such that the surface texture of the nanofabric layer is transferred upward to the material layer. Within both aspects, varying the porosity of nanofabric layer provides a measure of control over the degree of texturization of the material layer.
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