PROCESS FOR MANUFACTURING A MULTI-DRAIN ELECTRONIC POWER DEVICE INTEGRATED IN SEMICONDUCTOR SUBSTRATE AND CORRESPONDING DEVICE
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Oct 15, 2010
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Jul 8, 2005
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Abandoned
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Abstract
A process manufactures a multi-drain power electronic device on a semiconductor substrate of a first conductivity type and includes: forming a first semiconductor layer of the first conductivity type on the substrate, forming a second semiconductor layer of a second conductivity type on the first semiconductor layer, forming, in the second semiconductor layer, a first plurality of implanted regions of the first conductivity type using a first implant dose, forming, above the second semiconductor layer, a superficial semiconductor layer of the first conductivity type, forming in the surface semiconductor layer body regions of the second conductivity type, thermally diffusing the implanted regions to form a plurality of electrically continuous implanted column regions along the second semiconductor layer, the plurality of implanted column regions delimiting a plurality of column regions of the second conductivity type aligned with the body regions.
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Patent Owner(s)
Patent Owner | Address | |
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STMICROELECTRONICS S R L | ITALY AGRA BRIANZA AGRATE BRIANZA VARESE |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Frisina, Ferruccio | Sant'Agata Li Battiati, IT | 98 | 977 |
Rascuna, Simone | Catania, IT | 6 | 25 |
Saggio, Mario Giuseppe | Acicastello, IT | 68 | 152 |
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Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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