Semiconductor device and method of fabricating semiconductor device

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United States of America Patent

PATENT NO 8110443
APP PUB NO 20110039396A1
SERIAL NO

12923982

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Abstract

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A method of fabricating a semiconductor device from a semiconductor wafer, having external connecting terminals on one side of the semiconductor wafer and a cover layer on another side of the semiconductor wafer, includes forming a groove with a first width from the one side to at least an interface between the semiconductor wafer and the cover layer in the semiconductor wafer, and cutting the cover layer with a second width from a bottom side of the groove. The second width is narrower than the first width.

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Patent Owner(s)

Patent OwnerAddress
RENESAS ELECTRONICS CORPORATION2-24 TOYOSU 3-CHOME KOUTOU-KU TOKYO 135-0061

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Uoya, Kousaku Kanagawa, JP 2 8

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