DIRECT WAFER-BONDED THROUGH-HOLE PHOTODIODE
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United States of America Patent
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Issued Date -
Feb 24, 2011
app pub date -
Aug 20, 2010
filing date -
Aug 20, 2009
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Abstract
A photodetector array comprises a plurality of photodetectors formed by a high resistivity low doping concentration first semiconductor substrate and a low resistivity high doping concentration second semiconductor substrate. The first and second semiconductor substrates are directly bonded together with a silicon-to-silicon atomic bond at a bond interface, thereby providing a sharp transition from the first substrate to the second substrate. A method of making the photodetector array is also provided.
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