Method for manufacturing a resistive switching memory cell comprising a nickel oxide layer operable at low-power and memory cells obtained thereof

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United States of America Patent

PATENT NO 8310857
APP PUB NO 20110044089A1
SERIAL NO

12792332

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Abstract

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A resistive switching non-volatile memory element is disclosed comprising a resistive switching metal-oxide layer sandwiched between and in contact with a top electrode and a bottom electrode, the resistive switching metal oxide layer having a substantial isotropic non-stoichiometric metal-to-oxygen ratio. For example, the memory element may comprise a nickel oxide resistive switching layer sandwiched between and in contact with a nickel top electrode and a nickel bottom electrode whereby the ratio oxygen-to-nickel of the nickel oxide layer is between 0 and 0.85.

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Patent Owner(s)

  • IMEC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Goux, Ludovic Hannut, BE 22 313
Reyes, Judit Lisoni Oud-Heverlee, BE 1 21
Wouters, Dirk Leuven, BE 18 412

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