Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
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United States of America Patent
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Jun 17, 2014
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Mar 3, 2011
app pub date -
Aug 12, 2010
filing date -
Aug 27, 2009
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Abstract
A method for reducing graphene film thickness on a donor substrate and transferring graphene films from a donor substrate to a handle substrate includes applying a bonding material to the graphene on the donor substrate, releasing the bonding material from the donor substrate thereby leaving graphene on the bonding material, applying the bonding material with graphene onto the handle substrate, and releasing the bonding material from the handle substrate thereby leaving the graphene on the handle substrate. The donor substrate may comprise SiC, metal foil or other graphene growth substrate, and the handle substrate may comprise a semiconductor or insulator crystal, semiconductor device, epitaxial layer, flexible substrate, metal film, or organic device.
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