PHASE CHANGE STRUCTURE WITH COMPOSITE DOPING FOR PHASE CHANGE MEMORY
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United States of America Patent
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Issued Date -
Mar 3, 2011
app pub date -
Sep 3, 2009
filing date -
Sep 3, 2009
priority date (Note) -
Abandoned
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Abstract
A memory device is described using a composite doped phase change material between a first electrode and a second electrode. A memory element of phase change material, such as a chalcogenide, is between the first and second electrodes and has an active region. The phase change material has a first dopant, such as silicon oxide, characterized by tending to segregate from the phase change material on grain boundaries in the active region, and has a second dopant, such as silicon, characterized by causing an increase in recrystallization temperature of, and/or suppressing void formation in, the phase change material in the active region.
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