METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

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United States of America Patent

SERIAL NO

12941267

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Abstract

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A semiconductor device includes a capacitor provided above a substrate including electrodes and a ferroelectric film provided therebetween, a pad electrode electrically connected to one of the electrodes of the capacitor, the pad electrode being formed above the substrate, the pad electrode having a recess on a surface of the substrate, a protective film covering a part of the pad electrode other than the recess on the exposed surface, and a hydrogen absorbing film on the protective film and the recess of the pad electrode.

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Patent Owner(s)

Patent OwnerAddress
FUJITSU MICROELECTRONICS LIMITED7-1 NISHI-SHINJUKU 2-CHOME SHINJUKU-KU TOKYO 163-0722

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
NAGAI, Kouichi Kawasaki, JP 112 849
Saigoh, Kaoru Kawasaki, JP 23 261

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