EQUIPMENT FOR GROWING SAPPHIRE SINGLE CRYSTAL
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United States of America Patent
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Issued Date -
Mar 10, 2011
app pub date -
Sep 1, 2010
filing date -
Sep 8, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The equipment for growing a sapphire single crystal is capable of easily improving shape accuracy and positioning accuracy of a thermal shield which influence temperature distribution in a growth furnace. The thermal shield is provided in the growth furnace and encloses the cylindrical heater so as to form a hot zone. The thermal shield is constituted by a plurality of cylindrical sections, which are vertically stacked and whose radial positions are defined by a positioning mechanism. The cylindrical sections are composed of carbon felt.
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