EPITAXIAL SUBSTRATE COMPONENT MADE THEREWITH AND CORRESPONDING PRODUCTION METHOD
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United States of America Patent
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app pub date -
Nov 5, 2010
filing date -
Sep 30, 2005
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Abandoned
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Abstract
Proposed is a III-V-semiconductor-containing epitaxial substrate comprising at least one layer of porous III-V semiconductor material, together with a corresponding production method. Also specified is a component, particularly an LED, produced on the proposed epitaxial substrate, and a corresponding production method.
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