Silicon carbide semiconductor device

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United States of America Patent

SERIAL NO

12586018

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Abstract

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A silicon carbide semiconductor device comprising a region of germanium and a region of crystalline or polycrystalline silicon carbide. The germanium region and the silicon carbide region are configured to form a germanium/silicon carbide heterojunction.

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Patent Owner(s)

Patent OwnerAddress
UNIVERSITY OF WARWICK THEUNIVERSITY HOUSE COVENTRY CV4 8UW

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gammon, Peter Michael Hampshire, GB 1 4
Mawby, Phil Warwick, GB 2 5
Pérez-Tomás, Amador Barcelona, ES 1 4

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