Metal oxide semiconductor field effect transistor integrating a capacitor
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United States of America Patent
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Jul 9, 2013
Grant Date -
Mar 17, 2011
app pub date -
Nov 16, 2010
filing date -
Jul 31, 2009
priority date (Note) -
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Abstract
A bypass capacitor is directly integrated on top of a MOSFET chip. The capacitor comprises multi layers of conductive material and dielectric material staking on top of each other with connection vias through dielectric layer for connecting different conductive layers. The method of integrating the bypass capacitor comprises repeating steps of depositing a dielectric layer, forming connection vias through the dielectric layer, depositing a conductive layer and patterning the conductive layer.
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