Multi-valued ROM using carbon-nanotube and nanowire FET

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United States of America Patent

PATENT NO 8064253
APP PUB NO 20110063905A1
SERIAL NO

12560040

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Abstract

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A multivalued memory device which includes a first multivalued memory transistor and a second multivalued memory transistor, wherein each transistor has a channel made from at least one carbon nanotube or nanowire, wherein data is stored by varying the number of carbon nanotubes or nanowires used in the channel, wherein the channel is the at least one carbon nanotube or nanowire which allows current to flow through it.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA AMERICA RESEARCH INC1 TELCORDIA DRIVE SUITE 1S201 PISCATAWAY NJ 08854

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Paul, Bipul C Santa Clara, US 74 400

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