METHOD AND RESULTING STRUCTURE USING SILVER FOR LCOS DEVICES

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United States of America Patent

SERIAL NO

12957172

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Abstract

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An LCOS device includes a semiconductor substrate and a plurality of MOS transistors that is formed on a portion of the semiconductor substrate. The LCOS device includes a first dielectric layer overlying the plurality of MOS transistors and a patterned metal layer overlying the first dielectric layer. The patterned metal layer exposes portions of the first dielectric layer that form borders surrounding the patterned metal layer, wherein the patterned metal layer includes a plurality of electrodes. The LCOS device further includes a second dielectric layer overlying the exposed portions of the first dielectric layer. In an embodiment, the patterned metal layer comprises a silver bearing material. Each of the plurality of electrodes has an upper surface having a surface roughness of less than 5 Angstrom and a surface reflectivity of greater than 97% for a light having a wavelength of 500 nanometers and greater.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION18 ZHANGJIANG ROAD PUDONG NEW AREA SHANGHAI 201203
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONNO 18 WEN CHANG RD ECONOMIC-TECHNOLOGICAL DEVELOPMENT AREA DAXING DISTRICT BEIJING 100716

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lu, Enlian Shanghai, CN 4 3
Xiang, Yanghui Oliver Shanghai, CN 2 3

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