Novel process method for post plasma etch treatment
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United States of America Patent
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Issued Date -
Mar 31, 2011
app pub date -
Sep 28, 2009
filing date -
Sep 28, 2009
priority date (Note) -
Abandoned
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Abstract
A method of fabricating a wafer comprising MEMS devices comprises etching trenches or vias into the wafer using a deep reactive ion etching process wherein this process forms residual polymers on sidewalls of the trenches or vias. The wafer is exposed to a dry-cleaning process wherein residual polymers are removed. The dry-cleaning process comprises hot oven baking, combustion, or laser beam illumination.
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