Scintillation materials in single crystal or polycrystalline form with improved properties, especially light yield and strain birefringence
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United States of America Patent
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Issued Date -
Apr 14, 2011
app pub date -
Oct 7, 2010
filing date -
Oct 9, 2009
priority date (Note) -
Abandoned
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Abstract
and Bi as a cationic dopant, it also includes at least one other cation of the elements Y, Zr, Pd and Hf. The scintillation material may be in single crystal or polycrystalline form.
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