Process for producing scintillation materials of low strain birefringence and high refractive index uniformity
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United States of America Patent
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Issued Date -
Apr 14, 2011
app pub date -
Oct 7, 2010
filing date -
Oct 9, 2009
priority date (Note) -
Abandoned
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Abstract
with the at least one cationic dopant, heating the compound or the mixture obtained by the optional mixing to a melting temperature thereof, then growing the crystal or crystalline structure and cooling the resulting crystal or crystalline structure from a growing temperature to a temperature of 100° C. at a cooling rate of less than 20 K/h.
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