Rejuvenation method for ruthenium plating seed

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United States of America Patent

APP PUB NO 20110094888A1
SERIAL NO

12589599

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Abstract

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A method of rejuvenating a Ru plating seed layer during write pole fabrication in a PMR head is disclosed that involves forming an opening in a mold forming layer. A Ru seed layer is deposited by CVD within the opening and on a top surface of the mold forming layer. The substrate with the Ru seed layer is immersed in an acidic solution and an electric potential is applied for 1 to 2 minutes such that hydrogen is generated to reduce ruthenium oxides to Ru metal on the seed layer surface in an activation step. One or more surfactants are used to improve wettability of the Ru layer. The substrate is transferred directly to an electroplating solution without drying following the activation step to minimize exposure to oxygen that could regenerate oxides on the surface of the Ru layer. As a result, write pole voids and delamination are significantly reduced.

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Patent Owner(s)

Patent OwnerAddress
HEADWAY TECHNOLOGIES INC682 SOUTH HILLVIEW DRIVE MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Chao-Peng Fremont, US 21 93
Chudasama, Jas Milpitas, US 6 33
Lam, Situan San Jose, US 3 29
Lin, Chien-Li Fremont, US 9 54

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