METHOD AND STRUCTURE FOR SILICON NANOCRYSTAL CAPACITOR DEVICES FOR INTEGRATED CIRCUITS

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United States of America Patent

APP PUB NO 20110095396A1
SERIAL NO

12887481

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Abstract

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, any combinations of these, and the like. The device further includes a plurality of silicon nanocrystals spatially disposed in an area associated with the first width and the first length of the first electrode member. Each one of the nanocrystals has a size of about 20 nanometers and less according to a specific embodiment.

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Patent Owner(s)

Patent OwnerAddress
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION18 ZHANGJIANG ROAD PUDONG NEW AREA SHANGHAI 201203
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATIONNO 18 WEN CHANG RD ECONOMIC-TECHNOLOGICAL DEVELOPMENT AREA DAXING DISTRICT BEIJING 100716

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
FUMITAKE, MIENO Shanghai, CN 43 311

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