SOI type semiconductor device having a protection circuit
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United States of America Patent
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app pub date -
Jan 12, 2011
filing date -
Feb 1, 2007
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Abstract
An SOI type semiconductor device having a silicon substrate and a buried oxide layer formed on the silicon substrate includes an internal circuit formed in a first region having at least one FD type transistor having a SOI structure, the internal circuit performing a function of the semiconductor device and a protection circuit formed in a second region having at least one PD type transistor having a SOI structure, the protection circuit protecting the internal circuit from electro static damage.
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