Radio frequency (RF) power detector suitable for use in automatic gain control (AGC)

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United States of America Patent

PATENT NO 8264255
APP PUB NO 20110102047A1
SERIAL NO

12611151

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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In one form, a power detector includes first and third transistors of a first conductivity type, and second and fourth transistors of a second conductivity type. A control electrode of the first transistor receives a first bias voltage plus a positive component of a differential input signal. The second transistor is coupled in series with the first transistor and has a control electrode receiving a second bias voltage plus a negative component of the differential input signal. The third transistor is biased using the first bias voltage plus the negative component. The fourth transistor is coupled in series with the third transistor and is biased using the second bias voltage plus the positive component. A common interconnection point of the first and third transistors forms an output node. In another form, a power detector compares an output of a power detector core to multiple threshold voltages in corresponding comparators.

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Patent Owner(s)

Patent OwnerAddress
SILICON LABORATORIES INC400 W CESAR CHAVEZ AUSTIN TX 78701

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Yunteng Palo Alto, US 48 837
Sun, Ruifeng Austin, US 18 113

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