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Abstract

Method and structure for electro-plating aluminum species for top metal formation of liquid crystal on silicon displays. In a specific embodiment, the invention provides a method for fabricating a liquid crystal on silicon display device. The method includes providing a substrate, e.g., semiconductor wafer, silicon wafer, silicon on insulator. The method includes forming a transistor layer (e.g., MOS transistors) overlying the substrate. The method includes forming an interlayer dielectric layer (e.g., PSG, BPSG, FSG) overlying the transistor layer. The method includes forming a first conductive layer overlying the interlayer dielectric layer and forming a second interlayer dielectric layer overlying the first conductive layer. A dual damascene via structure is formed within the second interlayer dielectric layer. The method deposits a barrier metal layer (e.g., TiN, Ti/TiN) within the dual damascene via structure to form a liner that covers exposed regions of the dual damascene via structure.

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First Claim