METHOD FOR DEPOSITING ULTRA FINE GRAIN POLYSILICON THIN FILM
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
May 12, 2011
app pub date -
Apr 29, 2009
filing date -
May 2, 2008
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
Disclosed is a method for depositing a polysilicon thin film with ultra-fine crystal grains. According to the present invention, the polysilicon thin film is deposited on a substrate by supplying source gases inside a chamber in which the substrate is loaded, wherein the source gases include a silicon-based gas and an oxygen-based gas. The mixing ratio of the oxygen-based gas to the silicon-based gas may be 0.15 or less (excluding 0). The oxygen within the thin film may be 20 atomic % (atomic percentage) or less (excluding 0).
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully