Importance

Loading Importance Indicators...

Abstract

A split gate power transistor includes a laterally configured power MOSFET including a doped silicon substrate, a gate oxide layer formed on a surface of the substrate, and a split polysilicon layer formed over the gate oxide layer. The polysilicon layer is cut into two electrically isolated portions, a first portion forming a polysilicon gate positioned over a channel region of the substrate, and a second portion forming a polysilicon field plate formed over a portion of a transition region of the substrate. The field plate also extends over a drift region of the substrate, where the drift region is under a field oxide filled trench formed in the substrate. The field plate is electrically coupled to a source of the split gate power transistor.

Loading the Abstract Image...

First Claim