SIDE LIGHT EMITTING TYPE SEMICONDUCTOR LASER DIODE HAVING DIELECTRIC LAYER FORMED ON ACTIVE LAYER
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United States of America Patent
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app pub date -
Jan 21, 2011
filing date -
Oct 12, 2005
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Abandoned
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Abstract
Provided is a side light emitting type semiconductor laser diode in which a dielectric layer is formed on an active layer. The side light emitting type semiconductor laser diode includes an n-clad layer, an n-light guide layer, an active layer and a p-light guide layer sequentially formed on a substrate, and a dielectric layer with a ridge structure formed on the p-light guide layer.
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