Bonding connection between a bonding wire and a power semiconductor chip

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United States of America Patent

PATENT NO 8541892
APP PUB NO 20110121458A1
SERIAL NO

12888781

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A bonding connection between a bonding wire and a power semiconductor chip is disclosed. The power semiconductor chip has a semiconductor body arranged in which is an active cell region with a multiplicity of cells arranged one following the other in a lateral direction and connected electrically in parallel. The semiconductor body has a surface portion arranged above the active cell region in a vertical direction perpendicular to the lateral direction. Applied to the surface portion is a metallization layer onto which a bonding wire is bonded. The bonding wire comprises an alloy containing at least 99% by weight aluminum and at least one further alloying constituent. The aluminum has a grain structure with a mean grain size which is less than 2 μm.

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Patent Owner(s)

  • INFINEON TECHNOLOGIES AG

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Gutt, Thomas Taufkirchen, DE 17 284
Roth, Roman Sattendorf, AT 15 59
Siepe, Dirk Warstein, DE 11 64

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