SEMICONDUCTOR INTERCONNECTION
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United States of America Patent
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Issued Date -
May 26, 2011
app pub date -
Jul 10, 2009
filing date -
Jul 14, 2008
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
layer is formed on an interface between an insulating film and a Cu interconnection without increasing electrical resistivity of the Cu interconnection. In the semiconductor interconnection, a Cu interconnection containing Ti is embedded in a trench arranged on an insulating film on the semiconductor substrate, and a TiC layer is formed between the insulating film and the Cu interconnection. The insulating film is preferably composed of SiCO or SiCN. The thickness of the TiC layer is preferably 3-30 nm.
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