Programmable Resistance Memory
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United States of America Patent
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Issued Date -
May 26, 2011
app pub date -
Nov 25, 2009
filing date -
Nov 25, 2009
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
A nonvolatile memory includes write circuitry that writes to a selected memory element and, in parallel, to a data latch. The memory is configured to compare the current memory address to the previous memory address and to enable a read operation from the data latch rather than a selected memory element if the current and previous memory addresses are the same.
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