Chemical Mechanical Polishing Composition Containing Polysilicon Polish Finisher
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United States of America Patent
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Issued Date -
May 26, 2011
app pub date -
Jul 22, 2009
filing date -
Jul 24, 2008
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Abandoned
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Abstract
Provided are a chemical mechanical polishing (CMP) composition used for polishing a semiconductor device which contains polysilicon film and insulator, and a chemical mechanical polishing method thereof. The CMP composition is especially useful in a isolation CMP process for semiconductor devices. Provided is a highly selective CMP composition containing a polysilicon polish finisher which can selectively polish semiconductor insulators since it uses a polysilicon film as a polish finishing film.
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