Low impedance plasma

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United States of America Patent

PATENT NO 9028660
APP PUB NO 20110127157A1
SERIAL NO

12673393

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Abstract

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A magnetron sputtering apparatus (100) comprising: a magnetic array arranged to create a magnetic field (103) in the vicinity of a tubular target (2) which target at least partially surrounds the magnetic array and acts as a cathode (2a); an anode (2b); the magnetic array being arranged to create an asymmetric plasma distribution with respect to the normal angle of incidence to a substrate (3); and means (1b) for enhancing the magnetic field to produce a relatively low impedance path for electrons flowing from the cathode (2a) to the anode (2b).

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Patent Owner(s)

  • GENCOA LTD

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bellido-Gonzalez, Victor Liverpool, GB 10 25

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