Resistive memory device and method for fabricating the same

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United States of America Patent

PATENT NO 8203140
APP PUB NO 20110133152A1
SERIAL NO

12835265

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Abstract

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A resistive memory device is provided. The resistive memory device includes a bottom electrode, a resistance-variable layer, and a top electrode. The resistance-variable layer is disposed on the bottom electrode. The top electrode is disposed on the resistance-variable layer. The resistance-variable layer includes a conductive polymer layer that reacts with the top electrode to form an oxide layer.

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Patent Owner(s)

  • ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Sung-Yool Daejeon, KR 23 112

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