Method of forming capacitors, and methods of utilizing silicon dioxide-containing masking structures
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United States of America Patent
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May 22, 2012
Grant Date -
Jun 16, 2011
app pub date -
Feb 22, 2011
filing date -
Oct 16, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
Some embodiments include methods of forming capacitors. Storage nodes are formed within a material. The storage nodes have sidewalls along the material. Some of the material is removed to expose portions of the sidewalls. The exposed portions of the sidewalls are coated with a substance that isn't wetted by water. Additional material is removed to expose uncoated regions of the sidewalls. The substance is removed, and then capacitor dielectric material is formed along the sidewalls of the storage nodes. Capacitor electrode material is then formed over the capacitor dielectric material. Some embodiments include methods of utilizing a silicon dioxide-containing masking structure in which the silicon dioxide of the masking structure is coated with a substance that isn't wetted by water.
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