METHOD FOR MANUFACTURING QUANTUM DOT-SENSITIZED SOLAR CELL ELECTRODE, QUANTUM DOT-SENSITIZED SOLAR CELL ELECTRODE AND QUANTUM DOT-SENSITIZED SOLAR CELL

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United States of America Patent

APP PUB NO 20110146772A1
SERIAL NO

12888186

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Abstract

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Provided is a manufacturing method for a quantum dot-sensitized solar cell electrode for the production of a quantum dot-sensitized solar cell far more excellent in solar energy capture efficiency than ever before. Also provided is a quantum dot-sensitized solar cell electrode obtained by such manufacturing method. Also provided is a quantum dot-sensitized solar cell using such electrode. Also provided is a quantum dot-sensitized solar cell electrode for the production of a quantum dot-sensitized solar cell far more excellent in solar energy capture efficiency than ever before. Also provided is a quantum dot-sensitized solar cell using such electrode. The manufacturing method of the present invention is a manufacturing method for a quantum dot-sensitized solar cell electrode including quantum dots being semiconductor nanoparticles and having loaded on a porous n-type semiconductor electrode, the method including subjecting the porous n-type semiconductor electrode to photoirradiation while the electrode being immersed in a metal ion-containing solution.

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Patent Owner(s)

Patent OwnerAddress
NIPPON SHOKUBAI CO LTDOSAKA JAPAN OSAKA
KINKI UNIVERSITYHIGASHI-OSAKA-SHI OSAKA 577-8502

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
TADA, Hiroaki Nara-shi, JP 17 363

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