Enhanced integrity of a high-K metal gate electrode structure by using a sacrificial spacer for cap removal
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United States of America Patent
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Oct 18, 2011
Grant Date -
Jun 30, 2011
app pub date -
Oct 19, 2010
filing date -
Dec 31, 2009
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Abstract
In a process strategy for forming sophisticated high-k metal gate electrode structures in an early manufacturing phase, the dielectric cap material may be removed on the basis of a protective spacer element, thereby ensuring integrity of a silicon nitride sidewall spacer structure, which may preserve integrity of sensitive gate materials and may also determine the lateral offset of a strain-inducing semiconductor material.
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