Production process for high purity polycrystal silicon and production apparatus for the same
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United States of America Patent
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Oct 16, 2012
Grant Date -
Jul 7, 2011
app pub date -
Jan 25, 2011
filing date -
Nov 29, 2005
priority date (Note) -
Expired
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Abstract
In the production process of the present invention for high purity polycrystal silicon, using a vertical reactor having a silicon chloride gas-feeding nozzle and a reducing agent gas-feeding nozzle which are disposed at an upper part and a waste gas discharge pipe, a silicon chloride gas and a reducing agent gas are fed into the reactor to form polycrystal silicon at a tip part of the silicon chloride gas-feeding nozzle by the reaction of the silicon chloride gas with the reducing agent gas, and the polycrystal silicon is allowed to grow from the tip part of the silicon chloride gas-feeding nozzle toward a lower part thereof.
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