CRYSTAL GROWING APPARATUS AND CRYSTAL GROWING METHOD

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20110174214A1
SERIAL NO

13002565

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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To provide a crystal growing apparatus and a crystal growing method capable of enabling use of a quartz crucible for a longer period of time and improving operation rate.A crystal growing apparatus according to the invention includes a crystal growing furnace equipped with a quartz crucible, a raw material melting furnace, and a supply unit for repeatedly supplying a molten raw material from the raw material melting furnace to the quartz crucible. The crystal growing furnace may include a supply port for allowing supply of the molten raw material therethrough, and the supply port may be configured to be movable close to or away from the raw material melting furnace. A plurality of the crystal growing furnaces may be disposed around the raw material melting furnace. The raw material melting furnace may include an insoluble material separating unit. A crystal growing method according to the invention includes supplying a molten raw material melted in advance to a quartz crucible. In the crystal growing method of the invention, an insoluble material can be removed from the molten raw material before the supplying.

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First Claim

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Patent Owner(s)

Patent OwnerAddress
MITSUBISHI MATERIALS TECHNO CORPORATIONTOKYO 102-8205

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Horioka, Yukichi Chiba, JP 4 6

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