SILICON WAFERS AND INGOTS WITH REDUCED OXYGEN CONTENT AND METHODS FOR PRODUCING THEM

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United States of America Patent

APP PUB NO 20110177284A1
SERIAL NO

12837876

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Abstract

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Silicon nitride coated crucibles for holding melted semiconductor material and for use in preparing multicrystalline silicon ingots by a directional solidification process; methods for coating crucibles; methods for preparing silicon ingots and wafers; compositions for coating crucibles and silicon ingots and wafers with a low oxygen content.

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Patent Owner(s)

Patent OwnerAddress
MEMC SINGAPORE PTE LTD (UEN200614794D)8 CROSS STREET #11-00 PWC BUILDING SINGAPORE 048424

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Deshpande, Aditya J Chesterfield, US 6 14
Kimbel, Steven L St. Charles, US 36 256
Phillips, Richard J St. Peters, US 50 736
Shi, Gang O'Fallon, US 61 140

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