PROCESSING OF MULTILAYER SEMICONDUCTOR WAFERS
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United States of America Patent
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app pub date -
Mar 16, 2009
filing date -
Mar 18, 2008
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Abstract
A method and apparatus for machining, or forming a feature in, a patterned silicon wafer includes removing portions of surface layers on the wafer using a first pulsed laser (4) beam with a pulse width between 1 ps and 1000 ps; and removing portions of bulk silicon (1) underlying the surface layers from the wafer using a second pulsed laser (5) beam with a wavelength between 200 nm and 1100 nm. Re-deposited silicon may be removed from the wafer by etching.
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