ETCHANT COMPOSITION FOR METAL WIRING AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME
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United States of America Patent
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N/A
Issued Date -
Jul 21, 2011
app pub date -
Oct 11, 2010
filing date -
Jan 19, 2010
priority date (Note) -
Abandoned
status (Latency Note)
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Abstract
The present invention relates to an etchant for wet etching a wiring that includes copper, where the etchant includes approximately 5 to approximately 25 wt % of a peroxide, approximately 0.5 to approximately 5 wt % of an oxidant, approximately 0.1 to approximately 1 wt % of a fluoride-based compound and approximately 1 to approximately 10 wt % of a glycol. The etchant can provide an etching rate that is suitable to many processes, and produces an appropriate etching amount as well as an appropriate taper angle.In addition, the etchant exhibits advantages including relatively low viscosity as compared to phosphoric acid-based etchants, relatively uniform etching characteristics, and relative stability as compared to peroxide-based etchants.
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