Importance

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Abstract

[Object] To provide a plasma processing method and a plasma processing apparatus having high coverage property and excellent in-plane uniformity.[Solving Means] When sputtered particles that are beat out from a target by plasma are deposited on a surface of a substrate, those sputtered particles are decomposed by the plasma to thus generate active species, and then deposited on the surface of the substrate. Accordingly, a deposition mode similar to plasma CVD is obtained, and sputtering deposition with high coverage property and excellent in-plane uniformity is enabled. Particularly, since a high-frequency electric field and a ring-shaped magnetic neutral line are used for a plasma source, it is possible to efficiently generate plasma that has extremely high density in a region in which a magnetic field is zero. That plasma realizes plasma processing with high in-plane uniformity by arbitrarily adjusting a formation position and a size of the magnetic neutral line.

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First Claim