NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOF
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United States of America Patent
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Issued Date -
Aug 4, 2011
app pub date -
Feb 3, 2011
filing date -
Feb 4, 2010
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Abandoned
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Abstract
A non-volatile memory cell includes a first electrode, a steering element, a storage element located in series with the steering element, a plurality of discrete conductive nano-features separated from each other by an insulating matrix, where the plurality of discrete nano-features are located in direct contact with the storage element, and a second electrode. An alternative non-volatile memory cell includes a first electrode, a steering element, a storage element located in series with the steering element, a plurality of discrete insulating nano-features separated from each other by a conductive matrix, where the plurality of discrete insulating nano-features are located in direct contact with the storage element, and a second electrode.
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