FILM FOR MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 4, 2011
app pub date -
Jan 31, 2011
filing date -
Feb 1, 2010
priority date (Note) -
Abandoned
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Abstract
There is provided a new film for manufacturing a semiconductor device that is superior to prevent contamination of a semiconductor chip having an excellent balance of holding power during dicing a semiconductor wafer even where the semiconductor wafer is thin, peeling property when peeling the semiconductor chip that is obtained by dicing together with its adhesive layer, and low contamination property in which there is no attachment of cutting debris to the semiconductor chip. A film for manufacturing a semiconductor device that is used when manufacturing a semiconductor device has a base layer, a first pressure-sensitive adhesive layer that is provided on the base layer, a radiation curing-type second pressure-sensitive adhesive layer that is provided on the first pressure-sensitive adhesive layer and cured by radiation irradiation in advance, and an adhesive layer that is provided on the second pressure-sensitive adhesive layer.
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