COMPOSITION FOR POLISHING SILICON NITRIDE AND METHOD OF CONTROLLING SELECTIVITY USING SAME

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United States of America Patent

SERIAL NO

13124948

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Abstract

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A composition for polishing silicon nitride according to the present invention includes colloidal silica, a polishing aid including a phosphoric acid compound and a sulfuric acid compound. By further including an oxidizing agent, a first selectivity representing the ratio of a polishing speed for a metal layer to a polishing speed for a silicon nitride layer and a second selectivity representing the ratio of a polishing speed for an oxide insulating layer to a polishing speed for a silicon nitride are controlled.

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Patent Owner(s)

Patent OwnerAddress
NITTA HAAS INCORPORATEDOSAKA-SHI OSAKA 556-0022

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Tanaka, Rika Kyoto, JP 10 133

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