SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Aug 25, 2011
app pub date -
Feb 9, 2011
filing date -
Feb 22, 2010
priority date (Note) -
Abandoned
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Abstract
A method of producing a semiconductor device includes the steps of forming a trench in a semiconductor substrate of a first conductive type so that an active region having a first portion and a second region is formed; implanting a first impurity of the first conductive type at an implantation angle between 30 degrees and 45 degrees relative to a normal line in an implantation direction rotating relative to the normal line so that a first channel diffusion region and a channel stopper region of the first conductive type are formed; filling the trench with an insulation layer; implanting a second impurity of a second conductive type so that a second channel diffusion region of the second conductive type is formed; forming a gate insulation film on the first portion and the second portion; and forming a gate electrode on the gate insulation film.
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