MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Sep 1, 2011
app pub date -
Feb 26, 2010
filing date -
Feb 26, 2010
priority date (Note) -
Abandoned
status (Latency Note)
Importance
Abstract
A method of forming a reversible resistance-switching metal-carbon-metal (“MCM”) device is provided, the device including a first conducting layer, a second conducting layer, and a reversible resistance-switching element disposed between the first and second conducting layers, wherein the reversible resistance-switching element includes thermal CVD graphitic material and includes a highly resistive region that favors crack formation. Other aspects are also provided.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully