Asymmetric source and drain stressor regions
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United States of America Patent
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Jun 5, 2012
Grant Date -
Sep 1, 2011
app pub date -
May 3, 2011
filing date -
Sep 3, 2009
priority date (Note) -
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Abstract
A method forms a structure has a substrate having at least one semiconductor channel region, a gate dielectric on the upper surface of the substrate over the semiconductor channel region, and a gate conductor on the gate dielectric. Asymmetric sidewall spacers are located on the sidewalls of the gate conductor and asymmetric source and drain regions are located within the substrate adjacent the semiconductor channel region. One source/drain region is positioned closer to the midpoint of the gate conductor than is the other source/drain region. The source and drain regions comprise a material that induces physical stress upon the semiconductor channel region.
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